Abstract
We present a directed self-assembly (DSA) compliant flow for contact/via layers with immersion lithography assuming the graphoepitaxy process for the cylinders’ formation. We demonstrate that the DSA technology enablement needs co-optimization among material, design, and lithography. We show that the number of DSA grouping constructs is countable for the gridded-design architecture. We use template error enhancement factor to choose DSA material, determine grouping design rules, and select the optimum guiding patterns. Our post-pxOPC imaging data show that it is promising to achieve two-mask solution with DSA for the contact/via layer using 193i at 5 nm node.
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