Abstract
A heteroepitaxial (200 nm thick) (BST) thin film was deposited on a (111)MgO substrate using rf sputtering. X-ray diffraction examinations confirmed epitaxial growth and rhombohedral symmetry of the film ( and ) at room temperature. Polarized Raman spectra of the film were studied in the temperature range from 100 to 420 K. In contrast to a BST thin film grown on (001)MgO, the observed linear temperature dependence of the squared soft mode frequency suggests the displacive character of the ferroelectric-paraelectric phase transition in a BST thin film on (111)MgO.
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