Abstract
The authors found that an extremely thin resist pattern on a silicon dioxide can be directly transformed into a graphene channel through interfacial graphitization of liquid gallium. These patterned graphene field effect transistors show p-type field effect conductance characteristics and a maximum conductance modulation of 100% against an applied gate voltage range from −50 to +50 V at room temperature, which is almost identical to the on/off ratio of 2. These conductance modulation ratios improved with decreasing the initial resist thickness below 2 nm; however, the absolute value of the channel conductance also deteriorated with decreasing the resist thickness, suggesting that electron scattering at the domain boundary dominates the channel conductance.
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