Direct Synthesizing In‐Plane Heterostructures of Graphene and Hexagonal Boron Nitride in Designed Pattern

Abstract

AbstractIn‐plane heterostructure of graphene (G) and hexagonal boron nitride (h‐BN) has attracted increasing attentions owing to its exceptional properties and potentials in atomically thin circuitry. However, direct growth of patterned in‐plane G/h‐BN heterostructures (G‐BNs) by chemical vapor deposition (CVD) method in a controllable way remains a great challenge. Here, a reliable way to directly synthesize G‐BN in designed pattern by one CVD step is demonstrated. First, ultraviolet lithography and magnetron sputtering are utilized to deposit nickel nanofilm in designed pattern onto copper foil surface. Then the copper foil with prepatterned nickel nanofilm is used as the synthesis substrate. Benefiting from different mechanisms of graphene growth on Cu and Cu–Ni alloy surfaces, graphene grows solely on the Ni‐free surface of the substrate, followed by h‐BN growth on the exposed Ni‐pattern surface, realizing the direct growth of patterned G‐BN. The method presented here paves a viable road for controllable growth of 2D in‐plane heterostructures for variable applications.