Abstract
Several kinds of chemical vapor deposition (CVD) methods have been extensively used in the semiconductor industries for bulk crystal growth, thin film deposition, and nanomaterials synthesis. In this article, we focus on the microwave-excited surface wave plasma CVD (MW-SWP CVD) method for growth of graphene and related materials. The MW-SWP CVD system consisting of waveguide, slot antenna, and dielectric windows is significant for generating high density plasma with low electron temperature, enabling low temperature growth of materials without damaging the surface of base substrates. The synthesis of graphene and hexagonal boron nitride (hBN) films has been achieved on metals, semiconductors, insulators, and dielectric substrates for application in photovoltaics, sensors, batteries, supercapacitors, fuel cells, and various other electronic devices. The details of the synthesis process for graphene films, vertically-oriented graphene, doped-graphene, and hBN films by the MW-SWP CVD method are summarized to understand the growth mechanism, which will enable further development of the plasma CVD process for material synthesis at a low temperature for industrial applications.
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