Abstract
As (Ge)–S (Se) based amorphous bulk chalcogenide glasses and layers have been used for surface geometrical relief recording by 2 MeV energy H+ and He+ ion-beams. The formation of giant (height modulation from nanometers up to micrometers) geometrical reliefs (dots, lines), have been investigated. Efficiency of surface patterning was compared for selected compositions, type of ion beam and conductivity of substrates. Comparisons with optical and e-beam recording were made with aim to establish the details of relief formation mechanisms. The results show applicability of high-energy ion beams for in situ fabrication of planar optical elements on the surface of chalcogenide glasses (bulk samples or amorphous films).
Highlights
Chalcogenide glasses (ChGs), due to their high transparency in a wide spectral range (0.6–10 um) and high refractive index (n > 2), are of great interest as materials of photonics and integrated optics [1,2,3,4]
The range of used dose depended on the type of the chalcogenide glass, type of ion beam and type of pattern
In our experiments the largest efficiency of ion beam patterning was found for amorphous selenium (Fig. 3), that basically correlates with the data on lightinduced surface relief formation at equal average exposure [14, 18]
Summary
Chalcogenide glasses (ChGs), due to their high transparency in a wide spectral range (0.6–10 um) and high refractive index (n > 2), are of great interest as materials of photonics and integrated optics [1,2,3,4]. They present interesting nonlinear optical properties, photorefractive effects, photoinduced changes of optical transmission, refractive index and even volume changes that essentially enhances functionalities of optical elements, fabricated from ChGs [1,2,3,4,5,6,7,8]. Comparisons with optical, laser-beam or e-beam recording allow us to make some conclusions about the mechanisms of recording process and selection of suitable glass compositions
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