Abstract
Direct polarization switching controlled by the level of the injection current is achieved in InGaAsP lasers operating near the polarization transition temperature. The laser output can be switched from a pure TM00 mode at low injection currents to a TE00 mode at high currents with high extinction ratios and nanosecond response time. Conditions for polarization switching in InGaAsP and AlGaAs lasers at room temperature are also discussed.
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