Abstract
The direct patterning of silicon nitride (SiNx) thin films on glass substrates using a KrF 248 nm excimer laser has been investigated. The direct laser patterning process offers a cost-effective alternative to wet- and dry-etch lithographies for the fabrication of thin-film transistor liquid crystal displays (TFT-LCDs). It is demonstrated that direct laser patterning can effectively pattern 200 nm SiNx thin films at the laser energy density of 1350 mJ/cm2. We can therefore reduce the cost and process time by using excimer laser patterning and eliminating the need for wet- and dry-etch processes.
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