Abstract
TDS profiles convoluted with the instrument resolution were obtained by forming differences between diffraction profiles measured with neutrons of wavelength 0.60 Å on three perfect Si crystals of different thickness. The profiles were measured with two detector apertures for the reflections 022, 004, 044, 026, 008 and 066. From these measurements TDS correction factors α and hence a correction term ΔB for the temperature parameter of Si were derived. The temperature parameter of Si was determined for two temperatures, 92 and 292 K, as B92 = 0.212 (3) Å2 and B292 = 0.422 (3) Å2, respectively, from the refinement of 100 symmetry-inequivalent reflections measured with neutrons of wavelength 0.53 Å on an imperfect Si crystal.
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