Abstract
Rare-earth doped nitride attracts considerable attention because of its application as a light-emitting phosphor. The atomic site of dopants in a crystal is important for the development of advanced materials. Here, we directly observe a single Eu dopant atom in phosphor β-SiAlON using scanning transmission electron microscopy (STEM). A STEM annular dark-field image reveals that a Eu dopant exists in a continuous atomic channel in a β-Si3N4 structure. The image contrast of the single Eu dopant is confirmed based on the comparison of experimental and simulation results.
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