Abstract

Properties of modern semiconducting transistors and future electron or quantum devices are essentially determined by single dopant atoms. How to precisely control the individual dopant position is one of the key factors to advance these technologies. In this chapter, we first briefly introduce the research progress in single dopant devices. To fabricate single dopant devices at large scale, we then overview our previous propose to control the locations of single dopants by self-assembly of large molecules (polyglycerols) with each carrying one dopant atom. The synthesis process, doping properties, and challenges of the molecular doping technique will be thoroughly elaborated before we conclude this chapter.

Highlights

  • Dopants play an important role in electrical [1], optical [2], and other properties [3] of semiconductors

  • When 31P donor is under positive charge with 1/2 nuclear spin, the interaction range of electron wave function can extend tens of nanometers away from ionized phosphorus nucleus, and the electron-mediated nuclear spin coupling can be observed by using electron spin-resonance spectroscopy (ESR)

  • When nitrogen was co-doped with phosphorus into silicon, some kind of nitrogenphosphorus complex entities will form, retarding the electrical activation of phosphorus to ~1%. These results indicate that nitrogen dopants should be avoided to achieve a high activation rate of phosphorus by monolayer doping, the dopant-carrying molecules that contain nitrogen were used in micelles discrete doping process by Popere et al [47] and antioxidation surface with “click” cycloaddition by O’Connell et al [48]

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Summary

Introduction

Dopants play an important role in electrical [1], optical [2], and other properties [3] of semiconductors. Resistors based on a line of P dopants were characterized, showing that the Ohm’s law is still effective at atomic level [9] These single dopant control techniques are time-consuming serial processes and will be inefficient for industry applications. How to control individual dopants at large scale is urgently needed for future electronics based on single dopant atoms. We previously proposed to control individual dopants at large scale by the self-assembly of molecules with each carrying one dopant atom [10]. The substrate surface is patterned chemically by advanced lithography so that the carrier molecules will be grafted onto the desired locations as designed. The dendrimer-based monolayer doping technique is potentially a promising approach to control individual dopants at large scale. This chapter is to review the potential application of dendrimers as single dopant carriers

Atom control and devices design
Molecular monolayer doping
Structural features of dendrimers and dendrimer monolayers
Conclusion
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