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Abstract
Epitaxial thin films of LaNiO2, which is an oxygen-deficient perovskite with “infinite layers” of Ni1+O2, were prepared by a low-temperature reduction of LaNiO3 single-crystal films on NdGaO3 substrates. We report the high-angle annular dark-field and bright-field scanning transmission electron microscopy observations of infinite NiO2 planes of c-axis-oriented LaNiO2 epitaxial thin films with a layer stacking sequence of NiO2/La/NiO2. Resistivity measurements on the films show T2 dependence between 400 and 150 K and a negative Hall coefficient.
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