Abstract
We have directly observed the influence of nonequilibrium optical phonons on the cooling rate of hot carriers in GaAs:As. Carriers with density g${10}^{18}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$ were generated by an 80-fs, 1.72-eV pulse and cooled as well as recombined on a 1-ps time scale leaving behind only nonequilibrium phonons. The cooling rate of low-density (${10}^{17}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$) carriers generated by a second delayed pulse was studied through time-resolved luminescence. The rate changes with the intensity of the first pulse and delay of the second pulse in a manner consistent with reabsorption of the nonequilibrium phonons.
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