Abstract
We performed a novel experiment to directly observe the influence of non-equilibrium optical phonons on the cooling rate of hot carriers in GaAs grown at low temperature by molecular beam epitaxy. Hot carriers in this material recombine in 1 ps leaving behind only non-equilibrium optical phonons, which reduce strongly the cooling rate of hot carriers generated within the phonon lifetime. Our experiments rule out a noticeable role for plasmon-phonon coupling and related effects of free-carrier screening. Monte Carlo simulations confirm the dominant contribution of the hot-phonon effect for the reduction of carrier cooling rate.
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