Abstract
Helium ion microscopy (HIM) was used for direct nano-patterning of single-layer graphene (SLG) on SiO2/Si substrates. This technique involves irradiation of the sample with accelerated helium ions (He+). Doses of 2.0 × 1016 He+ cm−2 from a 30 kV beam induced a metal-insulator transition in the SLG. The resolution of HIM patterning on SLG was investigated by fabricating nanoribbons and nanostructures. Analysis of scanning capacitance microscopy measurements revealed that the spatial resolution of HIM patterning depended on the dosage of He+ in a non-monotonic fashion. Increasing the dose from 2.0 × 1016 to 5.0 × 1016 He+ cm−2 improved the spatial resolution to several tens of nanometers. However, doses greater than 1.0 × 1017 He+ cm−2 degraded the patterning characteristics. Direct patterning using HIM is a versatile approach to graphene fabrication and can be applied to graphene-based devices.
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