Abstract
In the courses of the development of a field-emission spectrometer designed to measure the energy spectrum of electrons obtained by field emission from the surface of semiconductors, some measurements have been made of the critical bias for a silicon sampie at room temperature. The critical bias is shown as a function of applied voltage. The energy of the electrons is below the Fermi energy by an amount less than one-half the band gap for silicon. This is in keeping with the fact that silicon develops a strong p-type surface due to boron contamination when heated in a Pyrex vacuum system. (H.D.R.)
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