Abstract
The simultaneous interaction of methyl radicals (CH3) and atomic hydrogen (H) with the surface of amorphous hydrogenated carbon (a-C:H) film is investigated. Two identical quantified beam sources for H and CH3 are used. The growth and/or erosion during the simultaneous interaction of the two beams with an amorphous hydrogenated carbon film is monitored by using in situ real-time ellipsometry at a substrate temperature of 320 K. Interaction with the CH3 beam alone causes slow growth, corresponding to a sticking coefficient for CH3 of ∼3×10−5. Simultaneous interaction of the atomic hydrogen beam and the CH3 radical beam yields a sticking coefficient for CH3 of 3×10−3, which is two orders of magnitude larger than for CH3 alone. From a microscopic modeling of this synergistic growth, the reaction probability for CH3 adsorbing at an adsorption site, which is created by atomic hydrogen at the surface, is derived to be 0.14.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.