Abstract
In this paper, we report the first successful demonstration of the direct growth of high-quality two-dimensional (2D) MoS2 semiconductors on a flexible substrate using a 25-μm-thick Yttria-stabilized zirconia ceramic substrate. Few-layered MoS2 crystals grown at 800 °C showed a uniform crystal size of approximately 50 μm, which consisted of about 10 MoS2 layers. MoS2 crystals were characterized using energy-dispersive X-ray spectroscopy. Raman spectroscopy was performed to investigate the crystal quality under bending conditions. The Raman mapping revealed a good uniformity with a stable chemical composition of the MoS2 crystals. Our approach offers a simple and effective route to realize various flexible electronics based on MoS2. Our approach can be applied for MoS2 growth and for other 2D materials. Therefore, it offers a new opportunity that allows us to demonstrate high-performance flexible electronic/optoelectronic applications in a less expensive, simpler, and faster manner without sacrificing the intrinsic performance of 2D materials.
Highlights
Two-dimensional (2D) materials such as graphene, transition metal dichalcogenide, and X-enes including silicene, germanene, and phosphorene have emerged as a new class of materials for flexible electronics because of their exceptionally stable and robust electrical properties under mechanical strain conditions [1,2,3,4,5,6,7,8,9,10]
2D materials became the most promising material candidates for future flexible electronics such as gas sensors, photodetectors, transistors, wearable devices, and communication systems. [16,17,18,19] While these flexible electronics demonstrated superior mechanical properties, their electrical performance substantially decreased compared with the rigid version of the devices
ZrO2 crystals and other 2D materials can be directly grown on a flexible ZrO2 substrate, and we suggest that the direct growth of a 2D materials on a flexible substrate offers a new opportunity to enable the use of 2D materials on a larger substrate at a lower cost
Summary
Two-dimensional (2D) materials such as graphene, transition metal dichalcogenide, and X-enes including silicene, germanene, and phosphorene have emerged as a new class of materials for flexible electronics because of their exceptionally stable and robust electrical properties under mechanical strain conditions [1,2,3,4,5,6,7,8,9,10]. Phosphorene exhibits a wide bandgap tunability range of about 1 eV with direct bandgap properties [14,15]. Such exceptional mechanical properties of 2D materials are primarily the result of atomic thinness and a low defect level, as well as a strong horizontal direction bonding force. The threshold voltage and subthreshold voltage swing of flexible MoS2 transistors are 2.1 V and 250 mV, respectively [22], which are much worse than their bulk counterparts [23]
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