Abstract
In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.
Highlights
GaN-based materials have attracted much interest as a material suitable for use in optoelectronic and electronic devices due to their excellent properties[1,2,3]
Due to the small interaction stress between GaN and the SiC substrate, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth
The substrate was heated to 600 °C for deposition of low temperature GaN (LT-GaN) buffer layer, which was grown with 1800 sccm of NH3 and 10 sccm of GaCl for 30 min
Summary
GaN-based materials have attracted much interest as a material suitable for use in optoelectronic and electronic devices due to their excellent properties[1,2,3]. Several papers about the direct growth of GaN layers on Si- face SiC substrates by HVPE9 have been reported. There have been few papers about the direct growth of GaN layers on C-face SiC substrates by HVPE as the growth of high quality GaN on C- face SiC is much more difficult[10].
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
