Direct GaInP-to-Ge optical interaction in the triple-junction solar cells with thinned intermediate GaAs subcell

Abstract

In the present work processes of direct light coupling in the triple-junction solar cells between top GaInP (wide band gap) and bottom Ge (narrow band gap) subcells are considered, when parameters of intermediate optical medium (comprised of middle GaAs p-n junction layers) are changed. Conditions of luminescent coupling gain and blocking are studied in multijunction structures with selectively tuned built-in photonic structures such as Bragg reflectors. An ability to manage the efficiency of optical interaction between subcells is investigated.