Abstract
High temperature fusion of silicon to diamond is reported. Polished, randomly oriented diamond films and unpolished (100) highly oriented diamond films were bonded to single-side polished (100) silicon in a dedicated ultrahigh vacuum bonding apparatus. Direct bonding under an applied uniaxial stress of ∼32 MPa was observed at temperatures above 950°C. The bonded interface was examined by scanning acoustic microscopy revealing only partial bonding at fusion temperatures of 950 and 1050°C. In contrast, complete bonding was evidenced at 1150 and 1200°C, although cracking of the diamond films became more prominent at these higher fusion temperatures.
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