Abstract
Direct formation of three-dimensional structures of Si in GaAs by excimer laser doping has been demonstrated. The doped Si is limited in a very shallow region (30∼110 nm) of GaAs with very high concentration (>1×1020 cm-3) that might be controlled easily by laser irradiation conditions. By using a thin solid Si dopant source, linewidths as narrow as 0.3 µm are achieved. On the other hand, the linewidths of 0.76 µm are obtained by projection patterned doping in SiH4 gas ambient. The linewidths of the doped regions are discussed relating to the lateral profiles of the calculated transient temperature rise of the substrates.
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