Abstract
We report the investigation on the compositional-pulling effect of crystalline Al x Ga 1− x N/(0 0 0 1) sapphire epilayers by cross-sectional cathodoluminescence (CL) and energy-dispersive X-ray (EDX) analyses. Direct evidence for the compositional distribution was found in the Al x Ga 1− x N (0< x<0.3) layers, which accompany the different optical phenomena arising from the change of the band gap. The band gap variation of the 1.7 μm Al x Ga 1− x N epilayers with the Al content rising from x=11% to 30% was observed. It is consistent with the result of depth-resolved CL spectra acquired with increasing electron energies, which can also be used to reveal the spatial composition distribution along the growth direction. We emphasize here that the selective-wavelength CL image is a very powerful tool in exploring the correlation between the specific emission and the composition of inhomogeneous alloys.
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