Direct etching of <inline-formula><math display="inline" overflow="scroll"><mrow><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math></inline-formula> and <inline-formula><math display="inline" overflow="scroll"><mrow><msub><mi mathvariant="normal">Al</mi><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math></inline-formula> by <inline-formula><math display="inline" overflow="scroll"><mrow><mn>900</mn><mtext>-</mtext><mi>keV</mi></mrow></math></inline-formula> gold ions

Abstract

We report the direct etching of Al2O3 and SiO2 using 900-keV Au+ ions. 2000-mesh Cu grids were employed as masks using two different configurations: (1) the Cu mesh was placed on top of each insulator separately and independent irradiations were performed, and (2) the Al2O3 and SiO2 substrates were positioned in an edge-to-edge configuration with a single Cu grid providing a common mask to both insulators. Scanning electron microscopy (SEM) analysis revealed quite different patterns resulting from the two irradiation configurations. While the irradiation using individual masks resulted in mirror-image patterns of the Cu mask in the substrates, the use of a common mask led to single line structures approximately normal to the edges of the substrates. The role of charge buildup and sputtering in relation to relative dielectric properties of the substrates and close proximity of the samples during irradiation is discussed.