Abstract
The present paper describes development of Inductively Coupled Plasma-Atomic Emission Spectrometry (ICP-AES) and Electrothermal Atomization-Atomic Absorption Spectrometry (ETA-AAS) for the direct determination of fifteen common metallic and semi-conducting elements in high purity arsenic without prior separation of the major matrix. With a view to improving determination of Cd in arsenic matrix and for providing independent check on determination of few representative elements such as Cu, Cr, Mn and Ni by ICP-AES method, ETA-AAS technique also has been developed for direct determination of these elements in arsenic matrix. A number of synthetic samples have been prepared and analysed by both the techniques to validate the analytical procedures adopted here.
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