Direct deposition of CeO2 films on Ni metal substrate by chemical vapor deposition

Abstract

Cerium dioxide thin films have been grown in-situ directly on cube textured Ni substrate by metal-organic chemical vapor deposition (MOCVD). At a lower deposition temperature of 400°C, an amorphous film was formed. The texture of crystalline CeO2 film was changed from (200) orientation to (111) orientation when the deposition temperature was increased from 450°C to 550°C. The growth rate was ~40 nm/min and the rms surface roughness was 50 nm for the CeO2 film deposited at 450°C for 10 min. Surface roughness of the film was increased with the development of (111) orientation. Deposited CeO2 film showed a mixed texture of (100) and (100) orientation. Depending on the deposition condition, the transition from (100) texture to (100) orientation was observed.