Abstract
Antiferroelectric PbZrO3 films had been grown on LaNiO3/Pt/Ti/SiO2/Si wafers using a sol-gel process. The electric field-induced antiferroelectric (AFE) to ferroelectric (FE) phase switching behaviors was examined by the polarization versus electrical field measurements as a function of temperature and film thickness. The AFE to FE phase switching was found to shift to lower temperature under a dc bias field. With increasing dc bias field, the FE phase region was enlarged and the FE to paraelectric phase transformation temperature shifted to higher temperature. The adjustability of the AFE phase to FE in temperature was weakened if the thickness of thin film decreased.
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