Abstract
Pulsed MOS capacitance measurement and Gated diode measurement both offer independent evaluation of bulk generation lifetimes is semiconductors. However, the former is a dynamic process while the latter is a steady state one and this brings in uncertainties in correlations attempted between the two evaluations. In this work a new device has been designed so that both the above techniques may be used to measure the generation lifetime at a single physical location on a semiconductor wafer. The experimental results thus obtained gives more confidence in the attempted correlation. In the present work it has been found that the two evaluations of lifetime agree closely.
Published Version
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