Direct calorimetric measurements in a PBII and deposition (PBII&D) experiment with a HiPIMS plasma source

Abstract

We report on direct calorimetric probe measurements in a plasma based ion implantation and deposition (PBII&D) system, using HiPIMS as plasma and deposition source. The combination of ion implantation and physical vapor deposition is a versatile system which allows successive and simultaneous coating, doping or cleaning of a substrate surface in a complex, finely adjustable system. Due to the pulsed nature of both processes, the delay between HiPIMS and PBII pulse is a crucial parameter which can be used to effectively tune the process according to the required needs. Since the delay defines at what time during the HiPIMS period the PBII pulse is applied to the substrate, it can also be utilized to obtain time resolved information about the ion density in the substrate's environment.To allow direct calorimetric measurement of a high voltage pulsed substrate, a common passive thermal probe (PTP) was modified utilizing a fiber optic temperature sensor. With this probe, the effect of PBII voltage, substrate distance and pressure, on the energy flux and ion current towards the PBII substrate was investigated as a function of the delay between HiPIMS and PBII pulse. The results were successfully compared to a basic model and revealed important information regarding substrate position, process pressure and the effect of secondary electrons in this combined system.