Direct and indirect determination of track etch parameters after sequential UV-C exposure and etching for two swift heavy ions in PADC: Production of rocket-shaped tracks

Abstract

The present work aimed to study the effect of single-sided UV-C successive exposures and sequential chemical etching on the different track parameters of bulk etch rate, Vb, detector diameter, D, detector length, L, track etch rate, Vt, detection sensitivity, and etched track shape. For this, PADC detectors initially irradiated with high energy-long range ions of 7 GeV Si and 17.48 GeV Ni were used. Fission fragment irradiations were also performed before UV-C exposure to determine the PADC bulk etch rate in exposed and non-exposed UV-C sides. Track parameters of bulk etch rate, Vb, detector diameter, D, detector length, L, track etch rate, Vt, and corresponding sensitivity were determined and compared on both sides. The relative differences between the track parameters on both sides are thus determined. It was found that exposure of PADC detectors to sequential UV-C followed by etching gives a strong increase in the two etching rates, Vb and Vt. Sensitivity measurements indicate that the rate of increase of Vb is greater than that of Vt. Track parameters data by direct track cone length and indirect track diameter versus depth evidence the existence of two regions under the polymer surface. These two regions were attributed to the polymer crosslinking and degradation processes resulting from exposure to UV-C. Region 1 and Region 2 have different etching rates. Region 1 has a constant rate, while Region 2 has an increasing rate as it goes deeper. Sequential UV-C followed by etching makes it possible to generate unusual rocket-shaped (or amphora-shaped) tracks. One possible application of the described technique is the production of nuclear track membranes.