Abstract
The authors report the experimental realization and magnetotransport of artificially synthesized Dirac semimetals in InAs/GaInSb superlattices (SLs). Single crystals of zero‐gap SLs with a Dirac dispersion of quasiparticles are designed and grown by molecular‐beam epitaxy on GaSb(100) substrates. Magnetotransport is characterized at 4–300 K and the semimetallic properties of the samples are demonstrated by the non‐saturating magnetoresistance of 640% in a magnetic field of B = 8 T. To determine the nature and properties of the charge carriers, Shubnikov–de Haas oscillatory components of the magnetoresistivity are analyzed by using the Onsager quantization condition. The theoretical and experimental results indicate that a linear energy‐momentum dispersion of the quasiparticles in the plane of the SL layers is realized at two Dirac nodes near the center of the Brillouin zone.
Published Version
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