Dipole Moment Effect of Cyano-Substituted Spirofluorenes on Charge Storage for Organic Transistor Memory

Abstract

As a fascinating information storage device, organic transistor memory based on molecular charge storage elements (MCSEs) has attracted great research interest. However, the charge storage mechanism of MCSEs is ambiguous due to their complex charge dynamic behaviors. Herein, the dipole moment effects on the charge trapping process and the performance of transistor memory are revealed based on cruciform spiro[fluorene-9,9′-xanthene] (SFXs), incorporating cyano moieties, as the typical electron-withdrawing substitution. The characterization of electrostatic potential (ESP) calculation, UV–vis, photoluminescence, and crystallography of SFXs shows the SFXs MCSEs with weaker dipole moment through symmetrical substitution. A series of prototype transistor memories based on SFXs exhibit an erasable type feature with smart photoresponsive behavior. The weaker dipole moment ones possess larger memory window (∼40 V), higher charge trapping density (>1 × 1013 cm–2), and higher programming speed (1014–1011 cm–2 s–1)....