Abstract
The transition from a dipolar to a spatially direct electron-hole liquid in two-dimensional layers of a type-II (buffer Si1-yGey)/tSi/sSi1-xGex/tSi/(cap Si1-yGey) heterostructure is investigated by photoluminescence spectroscopy at liquid-helium temperatures at high excitation levels. The transition takes place upon a reduction of the thickness of the sSi1-xGex layer, which forms a quantum well for holes in the valence band and a barrier in the conduction band separating the electron quantum wells (tSi layers). The main characteristics of both types of electron-hole liquid are determined. The lifetime of dipolar excitons is determined from photoluminescence kinetics measurements.
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