Abstract
A cryogenic and room-temperature diode pumped Tm,Ho:YVO4 microchip laser with 0.5 mm crystal length lasing around 2 μm is demonstrated for the first time to our knowledge. Under cryogenic temperature of 77K, as much as 1.2 W output and slope efficiency of 35% with respect to absorbed pump power are obtained. At temperature of 5°C the maximum output power of 48mW is obtained at an absorbed pump power of 503 mW, representing a 9.5% optical to optical conversion efficiency. In addition, as much as 8 mW single-frequency output lasing at 2052.6 nm is achieved at room temperature of 15° C.
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