Abstract
In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO4 microchip laser and Tm:Ho:GdVO4 microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO4 laser and Tm:Ho:GdVO4 laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO4 laser, Tm:Ho:YVO4 laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO4 laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO4 laser.
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