Diode-pumped laser performance of Tm:Sc2SiO5 crystal at 1971 nm**Project supported by the Shanghai Municipal Engineering Research Center for Sapphire Crystals, China (Grant No. 14DZ2252500), the Fund of Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences (Grant No. 2008DP17301), the Fundamental Research Funds for the Central Universities, the National Natural Science Foundation of China and the China

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The 4-at.% Tm:Sc2SiO5 (Tm:SSO) crystal is successfully obtained by the Czochralski method. The optical properties and thermal conductivity of the crystal are investigated. The broad continuous wave (CW) laser output of (100)-cut Tm:SSO with the dimensions of 3 mm× 3 mm× 3 mm under laser diode (LD)-pumping is realized. The full width at half maximum (FWHM) of the laser emitting reaches up to 21 nm. The laser threshold of Tm:SSO is measured to be 0.43 W. Efficient diode-pumped CW laser performance of Tm:SSO is demonstrated with a slope efficiency of 25.9% and maximum output power of 934 mW.