Abstract
We investigated the electron transport properties of cobalt sulphide Schottky diodes with Au and Ag metal contacts. Pure CoS2 nanoplates were synthesized using solid state reaction method. From temperature dependent IV characterstics diode parameters including ideality factor, barrier height and Richardson cofficient were calculated for Au/CoS2 and Ag/CoS2 diodes. The value of barrier height increased with increasing temperature for both devices, however Ideality factor showed different trend. The values of modified Richardson coefficient by assuming the Gaussian distribution of the barrier heights turns out to be 244.20Acm−2K−2 and 348.20Acm−2K−2 for Au/CoS2 and Ag/CoS2 diodes respectively. At high voltages we observed Space Charge Limited Current (SCLC) with an exponential trap distribution in Au/CoS2 diode. The density of the traps and characteristic temperature associated with these traps were determine to be 2.47×1014cm−3 and 141 K, respectively.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
