Abstract
The application of the GaInNAsSb compound to the design and fabrication of photodetector and modulator devices for telecommunications is reviewed. An advantage of the material is that even though it is GaAs-based, operating wavelengths as long as 1.3 and 1.55 μm corresponding, respectively, to the minimum dispersion and attenuation in fiber optics can be reached. It is especially well suited for the growth of resonant cavity-enhanced devices because an active region can be incorporated between GaAs/AlAs distributed Bragg reflectors, with which a high reflectivity can be easily reached due to a large refractive index step. We present an overview of experimental results on: p–i–n resonant cavity-enhanced photodetectors; heterojunction phototransistors; avalanche photodiodes (APDs); quantum-confined stark effect modulators.
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