Abstract
Pulsed ft measurement of high voltage epitaxial planar transistors is shown to be a suitable means to determine the electron diffusivity at high injection. As predicted by theory, the ft measured in hard-driven quasi-saturation condition is inversely proportional to the square of collector plus base thickness. Electron diffusivity computed by means of the simple injection model agrees well with theoretical prediction, while wide emitter stripe (270 μ) devices show some disagreement, probably due to crowding. Exact calculation confirms the validity of the approach at low collector voltage.
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