Abstract
Electric field-dependent electron spin diffusion in GaAs is investigated experimentally. We consider the three spin transport regimes, namely diffusive, drift-diffusion crossover, and drift. Of them, spin transport in the diffusive and drift-diffusion crossover regimes is studied in more detail. We also estimate the drift-diffusion crossover field (Ex) and the intrinsic spin diffusion length (δs) in the nondegenerate regime. The estimated value of δs is found to be 1.74μm, a factor of 0.87 lower than that reported in the literature. The technique, however, demonstrates it as a convenient and useful tool to measure Ex and δs in semiconductors.
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