Abstract
The role of diffusion in the growth of crystals from the gas phase has been investigated quantitatively. The dependence of growth rate on variations in gas composition and temperature profile have been determined for a simple system. It has been found that there is a critical value, J crit, of the growth rate above which the growing interface is no longer in a position of maximum activity. Three cases of major interest are included: (a) dissociative sublimation, illustrated by CdS, (b) dissociative sublimation with an inert third gas present, illustrated by CdS with A, and (c) chemical vapour transport, illustrated by GaAs with Cl 2. Many experimental observations, such as the temperature difference between source and seed required for acceptable growth rates, the stabilising influence of an inert gas and the variation of stoichiometry through the grown crystal, become explicable in terms of the model.
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