Abstract
ABSTRACTDiffusion of zinc into GaAs in the presence of excess arsenic vapour in the temperature range 850–950°C. has been studied for GaAs laser diodes. In all the experiments zinc and arsenic were taken in the ratio 1:10 as source. The junction delineation methods for obtaining the p-n junction depth are also discussed. The results obtained are compared with those reported using ZnAs2.
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