Abstract
A series of experiments is described in which zinc is diffused into GaAs at 1000° C using an isoconcentration technique. Standard error function complement profiles are obtained and graphs are produced showing the variation of diffusion coefficient with zinc concentration. Work carried out at two different arsenic vapour pressures is described and the effect of a variation in the stoichiometry of the semiconductor is thereby examined. The results of both sets of experiments are shown to agree with a substitutional-interstitial mechanism for the diffusion of zinc in GaAs. The solubility of zinc in GaAs is investigated as a function of ambient zinc vapour pressure and arsenic pressure. The results agree with a simple interpretation of the zinc as an almost completely ionised acceptor. A value is calculated for the maximum attainable solubility at 1000°C for GaAs in equilibrium with zinc vapour.
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