Abstract
Several diffusion runs of Mn in GaAs are performed in sealed quartz ampoules with four different Mn-containing sources: (a) solid crystal granules of Mn, (b) Mn3As, (c) MnAs, and (d) Mn thin films coated on GaAs substrates. Among these, only MnAs results in a smooth GaAs surface and uniform doping distributions. For the others interactions between the source materials and GaAs substrates give rise to poor surface morphologies and inhomogeneous distributions of new-phase (Mn,Ga) crystals. For diffusion at 800 °C, surface p-type carrier concentrations as high as 1020/cm3 are obtained. Diffusion profiles determined by C-V techniques resemble those obtained for Zn diffusions. A substitutional-interstitial mechanism is suggested as the primary diffusion mechanism for Mn in GaAs. Data are also presented showing that layer disordering in AlGaAs-GaAs superlattices can be induced by Mn impurities.
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