Abstract
In connection with the programme of work on the fabrication of planar transistors and integrated circuits, diffusion of phosphorus in a graded p-type layer has been studied.Impurity concentration profile in the p-type graded layer has been determined and used to evaluate phosphorus diffusion. Carrier concentration profiles and diffusion coefficients for both boron and phosphorus diffusion have been determined. This work has helped in the successful fabrication of a planar transistor.
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