Abstract
The minority carrier diffusion length has been measured on CdS and CdSe single crystals by means of the surface photovoltage method. By illuminating the samples through semi-transparent metal semiconductor Schottky barriers and for a given photovoltage signal, a linear relation was found between the intensity of light and the absorption length. By extrapolating to zero light intensity such a straight line, the diffusion length was obtained as the intercept with thex-axis. For good accuracy, a least-square fit method was employed to calculate the diffusion length values. The agreement of measurements performed on some Schottky diodes prepared in different ways and displaying different spectral responses confirmed a near independence of the SPV technique on some material parameters and experimental conditions.
Published Version
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