Abstract
In the present experiments transition elements including Zn, Mn, Cr, Cu, Ag and Au have been diffused into an AlAs-GaAs superlattice at temperatures between 700 and 1000° C. The disordering effects on the superlattice were assessed by shallow-angle polishing technique. Apart from the well-known disordering effect caused by the Zn diffusion, we have found that only Mn induces disordering in the superlattice. However the disordering effect arising from the Mn diffusion may be completely inhibited if the weight of As in the diffusion source is considerably higher than that of Mn. This suppression effect may be related to the formation of MnAs (or MnAs2), which leaves very little amount of Mn in the vapour phase for diffusion. The diffusions of Cu, Ag and Au showed no disordering effect on the superlattice. These results are explained using the interstitial-substitutional mechanism and the solubility of the dopant in GaAs.
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