Abstract
A study of the diffusion coefficient of selenium in silicon is described. The concentration distribution of selenium is determined from sheet resistivity and sheet Hall coefficient measurements as a function of temperature, combined with layer removal, considering the fact that the carrier concentration has functional dependence on temperature, on impurity energy level, and on the concentration of donors and acceptors. The diffusion coefficient measured from the concentration of selenium double donors, 0.26 and 0.50 eV below the conduction band edge, is compared with that measured by Fuller's two-specimen method. Between 1000 and 1250°C, the temperature dependence of the diffusion coefficient can expressed by D=0.11exp [-(2.42±0.05) eV/kT] cm2/sec.
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