Abstract
Si3 N4 /Ti and Si3 N4 /Ti/Si3 N4 combinations were joined by solid state diffusion bonding using hot pressing at temperatures ranging from 1200 to 1500°C. The microstructure of the resulting interfaces was characterised by scanning electron microscopy, electron probe microanalysis, and XRD. Si3 N4 /Ti samples hot pressed at temperatures less than 1400°C could not be bonded. However, at 1400°C bonding of single joints occurred, although the samples debonded during SEM preparation. Hot pressing at 1500°C resulted in effective joining by the formation of a reactive interface. For Si3 N4 /Ti/Si3 N4 sandwich samples hot pressed at 1400 and 1500°C, successful joining of Si3 N4 to Ti occurred by the formation of an interface on the Ti side. The surface roughness of the joint materials plays an important role, affecting the thickness of the reaction products. The interfaces grew in a parabolic fashion with the formation of various titanium silicides (Ti5 Si3 and TiSi) as well as titanium nitride (TiN).
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