Formation of palladium and titanium silicides by rapid thermal annealing

Abstract

Palladium (Pd 2 Si) and titanium (Ti Si 2) silicides have been formed on monocrystalline silicon substrates by rapid thermal annealing (R.T.A) of Pd and Ti layers deposited on silicon at 350–450°C and 700–750°C respectively, for 1 to 60 seconds. While the results obtained in the case of palladium silicide are in good agreement with those obtained at lower temperature for longer time of heating, the situation is more complicated for the titanium silicide formation, as the results indicate a multistep process and the presence during the first step of both TiSi and TiSi 2. In addition, the growth of titanium silicide seems to be different from that measured during conventional furnace annealing. Palladium and titanium silicide layers about 300 nm thick with resistivity close to 25–40 μΩ.cm could be obtained by heating Pd and Ti on silicon at 450°C and 750°C respectively for a few seconds.